Kingston 2GB 1600MHz DDR3 CL11 KVR16S11/2GB
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KVR16S11/2
2GB 1Rx8 256M x 64-Bit PC3-12800
CL11 204-Pin SODIMM
DESCRIPTION
This document describes ValueRAM's 256M x 64-bit (2GB)
DDR3-1600 CL11 SDRAM (Synchronous DRAM) 1Rx8, memory
module, based on eight 256M x 8-bit FBGA components. The
SPD is programmed to JEDEC standard latency DDR3-1600
timing of 11-11-11 at 1.5V. This 204-pin SODIMM uses gold
contact fingers. The electrical and mechanical specifications
are as follows:
FEATURES
JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
VDDQ = 1.5V (1.425V ~ 1.575V)
800MHz fCK for 1600Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 11, 10, 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with
starting address 000 only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB : Height 1.180 (30.00mm), single sided component
Document No. VALUERAM1167-001. A00 04/30/12 Page 1
Memory Module Specifi cations
SPECIFICATIONS
CL(IDD) 11 cycles
Row Cycle Time (tRCmin) 48.125ns (min. )
Refresh to Active/Refresh 160ns (min. )
Command Time (tRFCmin)
Row Active Time (tRASmin) 35ns (min. )
Maximum Operating Power 2.220 W
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C
Power will vary depending on the SDRAM used.
2GB 1Rx8 256M x 64-Bit PC3-12800
CL11 204-Pin SODIMM
DESCRIPTION
This document describes ValueRAM's 256M x 64-bit (2GB)
DDR3-1600 CL11 SDRAM (Synchronous DRAM) 1Rx8, memory
module, based on eight 256M x 8-bit FBGA components. The
SPD is programmed to JEDEC standard latency DDR3-1600
timing of 11-11-11 at 1.5V. This 204-pin SODIMM uses gold
contact fingers. The electrical and mechanical specifications
are as follows:
FEATURES
JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
VDDQ = 1.5V (1.425V ~ 1.575V)
800MHz fCK for 1600Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 11, 10, 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with
starting address 000 only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB : Height 1.180 (30.00mm), single sided component
Document No. VALUERAM1167-001. A00 04/30/12 Page 1
Memory Module Specifi cations
SPECIFICATIONS
CL(IDD) 11 cycles
Row Cycle Time (tRCmin) 48.125ns (min. )
Refresh to Active/Refresh 160ns (min. )
Command Time (tRFCmin)
Row Active Time (tRASmin) 35ns (min. )
Maximum Operating Power 2.220 W
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C
Power will vary depending on the SDRAM used.